microSilicon X

Shielded Silicon Detector for all Photon Fields

Due to its newly developed shielding, the microSilicon X is perfectly suited for measurements in photon fields up to large field sizes. With its excellent spatial resolution, it is possible to measure very precisely beam profiles, even in the penumbra region.
The improved energy response enables the user to perform accurate, field size independent percentage depth dose measurements. In addition the new design results in a small water equivalent window thickness, which has positive effects on the measurements of output factors.

Shielded diode detector for photon field sizes up to 40 x 40 cm²
The shielding reduces the low energy scattered radiation amount in the detector signal
Ideal for percentage depth dose and profile measurements
Excellent dose stability (@6 MV ≤ 0.1 %/kGy)

Shielded diode detector for photon field sizes up to (40 x 40) cm²
The shielding reduces the low energy scattered radiation amount in the detector signal
Ideal for percentage depth dose measurements, field size independent
Excellent dose stability (≤ 0.1 %/kGy at 6 MV)
Low dose per pulse dependence

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